An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Neugroschel, A ^b   Bersuker, G ^a   Choi, R ^a   Cochrane, C ^c   Lenahan, P ^c   Heh, D ^a   Young, C ^a   Kang, C Y ^a   Lee, B H ^d   Jammy, R ^d  

^a SEMATECH   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIFE-TIME ANALYSIS; NBTI DEGRADATION; P-MOSFETS; THRESHOLD VOLTAGE SHIFTS;

DEGRADATION; ELECTRON DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; SULFATE MINERALS; THRESHOLD VOLTAGE;

THERMODYNAMIC STABILITY;

EID: 46049085849     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346772     Document Type: Conference Paper

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