Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3421-3431

  Masuduzzaman, Muhammad ^a   Islam, Ahmad Ehteshamul ^a   Alam, Muhammad Ashraful ^a  

^a Purdue University   (United States)

Author keywords

Bulk traps; Charge pumping; High dielectric; Iinterface traps; Trap profiling

Indexed keywords

ELECTRON ENERGY LEVELS; GATE DIELECTRICS; GATES (TRANSISTOR); LOCATION; MOSFET DEVICES; NUMERICAL METHODS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

ANALYTICAL FORMULAS; BULK TRAPS; CHARGE PUMPING; CP TECHNIQUES; DIELECTRIC STACKS; ENERGY LEVELS; FALL TIMES; GATE DIELECTRIC STACKS; IINTERFACE TRAPS; MOS TRANSISTORS; MULTI FREQUENCIES; NUMERICAL MODELS; TRAP PROFILING;

FREQUENCY RESPONSE;

EID: 57149126233     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006773     Document Type: Article

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