NBTI degradation: From physical mechanisms to modelling

Microelectronics Reliability

Volumn 46, Issue 1, 2006, Pages 1-23

  Huard, V ^a   Denais, M ^b,c   Parthasarathy, C ^b  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b STMICROELECTRONICS   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; STRESS ANALYSIS;

PHYSICAL MECHANISMS; TRANSISTOR DEGRADATION; TRANSISTOR PARAMETERS;

MOSFET DEVICES;

EID: 28844506128     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.02.001     Document Type: Article

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