Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devicesapplication to NBTI

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 411-413

  Kaczer, B ^a   Roussel, Ph J ^a   Grasser, T ^b   Groeseneken, G ^a,c  

^a IMEC   (Belgium)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

MOSFETs; Negative bias temperature instability (NBTI); Reliability; Variability

Indexed keywords

ANALYTICAL DESCRIPTION; AVERAGE NUMBERS; CHARGE SHIFT; DECA-NANOMETER; EXPONENTIAL DISTRIBUTIONS; GATE OXIDE; GATE OXIDE CHARGES; MOS-FET; MOSFETS; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PERCOLATION MODELS; STATISTICAL DISTRIBUTION; THRESHOLD VOLTAGE SHIFTS; TRAPPED CHARGE;

GATES (TRANSISTOR); MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; SOLVENTS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

POISSON DISTRIBUTION;

EID: 77951879404     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2044014     Document Type: Article

References (8)

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