SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 18, 2011, Pages

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

(7) Toledano Luque, M a,b Kaczer, B b Roussel, Ph J b Franco, J b,c Ragnarsson, L A b Grasser, T d Groeseneken, G b,c

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

d INSTITUTE FOR MICROELECTRONICS (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNITUDE DISTRIBUTION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NEGATIVE GATE; POSITIVE CHARGES; POSITIVE GATE BIAS; SILICON OXYNITRIDES; TRAPPED CHARGE; VOLTAGE TRANSIENTS;

GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; POWER QUALITY; SEMICONDUCTING SILICON; SILICON NITRIDE; SILICON OXIDES; THRESHOLD VOLTAGE; TRANSIENTS; TRANSISTORS;

BIAS VOLTAGE;

EID: 79957441081 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3586780 Document Type: Article

Times cited : (20)

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