On the cyclic threshold voltage shift of dynamic negative-bias temperature instability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Teo, Z Q ^a   Boo, A A ^a   Ang, D S ^a   Leong, K C ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

Bias temperature instability; hole trapping; interface states; pulsed I V; recovery ultra fast measurement

Indexed keywords

AB INITIO; BIAS TEMPERATURE INSTABILITY; CYCLIC THRESHOLD; EXPERIMENTAL EVIDENCE; HDL MODELS; HOLE TRAPPING; INTERFACE STATES; NEGATIVE BIAS TEMPERATURE INSTABILITY; OXYGEN VACANCY DEFECTS; POSITIVELY CHARGED; PULSED I-V; SI-SI BONDS; SI-SI DIMER; STRESS CONDITION; SWITCHING BEHAVIORS; THRESHOLD VOLTAGE SHIFTS;

BIAS VOLTAGE; CHEMICAL BONDS; DEFECTS; HOLE TRAPS; INTEGRATED CIRCUITS; OXYGEN; OXYGEN VACANCIES; SILICON; SILICON COMPOUNDS; STRUCTURAL RELAXATION; THRESHOLD VOLTAGE;

DYNAMICS;

EID: 79959293699     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784611     Document Type: Conference Paper

References (13)

1. Z. Q. Teo, D. S. Ang and K. S. See, "Can the reaction-diffusion model explain generation and recovery of interface states contributing to NBTI?," in IEDM Tech. Dig., 2009, pp. 689-692.
2. Z. Q. Teo, D. S. Ang and C. M. Ng, ""Non-hydrogen- transport" characteristics of dynamic negative-bias temperature instability," IEEE Electron Dev. Lett., vol. 31, no. 4, pp. 269-271, Apr. 2010.
3. K. O. Jeppson and C. M. Svensson, "Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices," J. Appl. Phys., vol. 48, no. 5, pp. 2004-2014, May 1977.
4. M. A. Alam, "A critical examination of the mechanics of dynamic NBTI for PMOSFETs," in IEDM Tech. Dig., 2003, pp. 345-348.
5. J. P. Campbell, P. M. Lenahan, C. J. Cochrane, A.T. Krishnan, and S. Krishnan, "Atomic-scale defects involved in the negative-bias temperature instability," IEEE Trans. Dev. & Mat. Reliab., vol. 7, no. 4, pp. 540-557, Dec. 2007.
6. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, "Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors," J. Appl. Phys, vol. 103, art. no. 044505, Feb. 2008.
7. J. T. Ryan, P. M. Lenahan, T. Grasser, and H. Enichlmair, "Observations of negative bias temperature instability defect generation via on the fly electron spin resonance," Appl. Phys. Lett, vol. 96, art. no. 223509, Jun. 2010.
8. T. Grasser, B. Kaczer, W. Goes, Th. Aichinger, Ph. Hehenberger, and M. Nelhiebel, "A two-stage model for negative bias temperature instability," in Proc. IRPS, 2009, pp. 33-34.
9. A. J. Lelis and T. R. Oldham, "Time dependence of switching oxide traps," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 1835-1843, Dec. 1994.
10. C. J. Nicklaw, Z.-Y. Lu, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, "The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2," IEEE Trans.Nucl. Sci., vol. 49, no. 6, pp. 2667-2673, Dec. 2002.
11. G. A. Du, D. S. Ang and Z. Q. Teo, "Ultrafast measurement on NBTI," IEEE Electron Dev. Lett., vol. 30, no. 7, pp. 275-277, Jul. 2009.
12. Y. Z. Hu, D. S. Ang and Z. Q. Teo, "Threshold voltage and mobility extraction by ultrafast switching measurement on NBTI," IEEE Trans. Electron Dev., vol. 57, no. 8, pp. 2027-2031, Aug. 2010.
13. J. P. Campbell, P. M. Lenahan, A.T. Krishnan, and S. Krishnan, "Observations of NBTI-induced atomic-scale defects," IEEE Trans. Dev. & Mat. Reliab., vol. 6, no. 2, pp. 117-122, Jun. 2006.