Defects spectroscopy in SiO2 by statistical random telegraph noise analysis

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Gusmeroli, R ^a   Compagnoni, C Monzio ^a   Riva, A ^a   Spinelli, A S ^a   Lacaita, A L ^a,b   Bonanomi, M ^a,c   Visconti, A ^a,c  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

SILICON COMPOUNDS;

EID: 46049115919     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346819     Document Type: Conference Paper

References (8)

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4. A. Asenov, et al., "RTS amplitudes in decananometer MOSFETs: 3-D simulation study," IEEE Trans. Electron Devices 50, pp. 839-845, 2003.
5. K. Hung, et al., "Random telegraph noise of deep-submicrometer MOSFET's," IEEE Electron Device Lett. 11, pp. 90-92, 1990.
6. Y. Yuzhelevski, et al., "Random telegraph noise analysis in time domain," Rev. Sci. Instrum. 71, pp. 1681-1688, 2000.
7. D. Ielmini, et al., "Modeling of SILC based on electron and hole tunneling - Part I: Transient effects," IEEE Trans. Electron Devices 47, pp. 1258-1265, 2000.
8. A. van der Wel, et al., "Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise," IEEE Trans. Electron Devices 50, pp. 1378-1384, 2003.