Multiphonon hole trapping from first principles

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Schanovsky, F ^a   Gos W ^a   Grasser, T ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONIC STRUCTURE; GATE DIELECTRICS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS;

BULK DEFECTS; DEFECT MODEL; FIRST PRINCIPLES; HOLE TRAPPING; METAL OXIDE SEMICONDUCTOR; MULTIPHONONS; NON-RADIATIVE; SIMPLE METHOD;

DENSITY FUNCTIONAL THEORY;

EID: 79551626064     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3533269     Document Type: Conference Paper

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