The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2667-2673

  Nicklaw, C J ^a   Lu, Z Y ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Pantelides, S T ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Defects; Density functional theory; E center; Oxide; Oxygen vacancies; Radiation

Indexed keywords

AMORPHOUS SILICON; ATOMS; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ENERGY GAP; HOLE TRAPS; OXYGEN; PROBABILITY DENSITY FUNCTION; RADIATION EFFECTS; SWITCHING FUNCTIONS;

OXYGEN VACANCIES;

SILICA;

EID: 0036952441     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805408     Document Type: Conference Paper

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