The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 16-25

  Grasser, T ^a   Reisinger, H ^b   Wagner, P J ^a   Schanovsky, F ^a   Goes, W ^a   Kaczer, B ^c  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; CHARACTERISTIC TIME; DEFECT SPECTROSCOPY; DISCRETE STEP; DISTRIBUTION OF TIME CONSTANTS; HOLE CAPTURE; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; MULTIPHONONS; NEGATIVE BIAS; NEW MODEL; NMOS TRANSISTORS; NON-RADIATIVE; QUANTITATIVE MODELS; RANDOM TELEGRAPH NOISE; STATISTICAL PROPERTIES; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED; TIME DEPENDENT;

DEFECTS; METAL RECOVERY; TELEGRAPH;

FIELD EFFECT TRANSISTORS;

EID: 77957892897     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488859     Document Type: Conference Paper

References (44)

1. T. Grasser et al., in Defects in Microelectronic Materials and Devices, edited by D. Fleetwood et al. (Taylor and Francis/CRC Press, 2008), pp. 1-30.
2. K. Jeppson et al., JAP 48, 2004 (1977).
3. M. Alam et al., MR 47, 853 (2007).
4. S. Mahapatra et al., T-ED 56, 236 (2009).
5. S. Rangan et al., IEDM (2003), pp. 341-344.
6. B. Kaczer et al., APL 86, 1 (2005).
7. V. Huard et al., MR 46, 1 (2006).
8. H. Reisinger et al., T-DMR 7, 119 (2007).
9. B. Kaczer et al., IRPS (2009), pp. 55-60.
10. T. Grasser et al., IRPS (2009), pp. 33-44.
11. T. Tewksbury, Ph.D. Thesis, MIT, 1992.
12. B. Kaczer et al., IRPS (2005), pp. 381-387.
13. A. McWhorter, Sem. Surf. Phys 207 (1957).
14. M. Weissman, Rev. Mod. Phys 60, 537 (1988).
15. M. Kirton et al., Adv. Phys. 38, 367 (1989).
16. V. Huard et al., IIRW (2005), pp. 5-9.
17. B. Kaczer et al., IRPS (2008), pp. 20-27.
18. H. Reisinger et al., IRPS (2010), (in print).
19. H. Reisinger et al., IIRW (2009), pp. 30-35.
20. T. Grasser et al., IEDM (2009), pp. 729-732.
21. D. Lang, JAP 45, 3023 (1974).
22. A. Karwath et al., APL 52, 634 (1988).
23. D. Vuillaume et al., PRB 34, 1171 (1986).
24. A. Asenov et al., T-ED 50, 839 (2003).
25. H. Mueller et al., JAP 79, 4178 (1996).
26. B. Kaczer et al., IRPS (2010), (in print).
27. D. Gillespie, J. Comp. Phys. 22, 403 (1976).
28. M. Uren et al., PRB 37, 8346 (1988).
29. T. Grasser et al., IEDM (2007), pp. 801-804.
30. K. Ralls et al., PRL 52, 228 (1984).
31. A. Avellán et al., JAP 94, (2003).
32. A. Lelis et al., T-NS 41, 1835 (1994).
33. E. Poindexter et al., J. Electrochem. Soc. 142, 2508 (1995).
34. K. Huang et al., Proc. R. Soc. A 204, 406 (1950).
35. C. Henry et al., PRB 15, 989 (1977).
36. W. Fowler et al., PRB 41, 8313 (1990).
37. D. Gillespie, Markov Processes (AP, 1992).
38. D. McQuarrie, J. Appl. Prob. 4, 413 (1967).
39. O. Ibe, Markov Processes for Stochastic Modeling (AP, 2009).
40. C. Kelley, PRB 20, 5084 (1979).
41. P. Restle et al., IBM J. Res. Dev. 34, 227 (1990).
42. S. Makram-Ebeid et al., PRB 25, 6406 (1982).
43. S. Ganichev et al., Phys. SS 39, 1703 (1997).
44. A. Palma et al., PRB 56, 9565 (1997).