Recovery-free electron spin resonance observations of NBTI degradation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 43-49

  Ryan, J T ^a   Lenahan, P M ^a   Grasser, T ^b   Enichlmair, H ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c AMS AG   (Austria)

Author keywords

E centers; Electron spin resonance; Negative bias temperature instability; On the fly

Indexed keywords

ATOMIC SCALE; DEFECT GENERATION; DEPASSIVATION; ELECTRON SPIN RESONANCE; ELEVATED TEMPERATURE; FREE ELECTRON; HOLE CAPTURE; INTERFACE STATE; INVERSION LAYER; NEGATIVE BIAS TEMPERATURE INSTABILITY; ON THE FLIES; POSITIVELY CHARGED; PRE-STRESS; ROOM TEMPERATURE;

DEFECT DENSITY; DEFECTS; NEGATIVE TEMPERATURE COEFFICIENT; OPTICAL TRANSFER FUNCTION; OXYGEN; OXYGEN VACANCIES; PARAMAGNETIC RESONANCE; RESONANCE; SPIN DYNAMICS; THERMODYNAMIC STABILITY;

ELECTRONS;

EID: 77957895909     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488854     Document Type: Conference Paper

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