Understanding SRAM high-temperature-operating-life NBTI: Statistics and permanent vs recoverable damage

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 452-455

  Haggag, A ^a   Anderson, G ^a   Parihar, S ^a   Burnett, D ^a   Abeln, G ^a   Higman, J ^a   Moosa, M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; DECONVOLUTION; ELECTRON TRAPS; FUNCTION EVALUATION; STATISTICAL METHODS;

PERMANENT NBTI SHIFTS; RECOVERABLE DAMAGE; SHIFT STATISTICS; VOLTAGE DEPENDENCE;

STATIC RANDOM ACCESS STORAGE;

EID: 34548777024     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369932     Document Type: Conference Paper

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