The fast initial, threshold voltage shift: NBTI or high-field stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 72-78

  Campbell, J P ^a   Cheung, K P ^a   Suehle, J S ^a   Oates, A ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Electron trapping; High field stress; Hole trapping; NBTI

Indexed keywords

ELECTRON-TRAPPING; HIGH-FIELD STRESS; HOLE-TRAPPING; NBTI; RELIABILITY PHYSICS;

ELECTRIC FIELDS; RELIABILITY; THERMODYNAMIC STABILITY;

THRESHOLD VOLTAGE;

EID: 50649119425     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558866     Document Type: Conference Paper

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