A study of NBTI and short-term threshold hysteresis of thin nitrided and thick non-nitrided oxides

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 106-114

  Reisinger, Hans ^a   Vollertsen, Rolf Peter ^a   Wagner, Paul Jürgen ^b   Huttner, Thomas ^a   Martin, Andreas ^a   Aresu, Stefano ^a   Gustin, Wolfgang ^a   Grasser, Tibor ^b   Schlunder, Christian ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

MOSFET; Negative bias temperature instability (NBTI); Recovery; Relaxation

Indexed keywords

DUAL WORK FUNCTION; FAST MEASUREMENT; MOSFET; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); NITRIDED OXIDES; RELAXATION; STRESS FIELD; STRESS TIME; STRESS-TIME CURVES; THERMAL ACTIVATION; THICK OXIDES; THRESHOLD HYSTERESIS; THRESHOLD SHIFTS;

GATES (TRANSISTOR); MEASUREMENT ERRORS; MOSFET DEVICES; OXIDES; STRESSES; THERMODYNAMIC STABILITY;

NEGATIVE TEMPERATURE COEFFICIENT;

EID: 67650324418     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2021389     Document Type: Conference Paper

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