Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2674-2683

  Fleetwood, D M ^a   Xiong, H D ^a   Lu, Z Y ^a   Nicklaw, C J ^a   Felix, J A ^a   Schrimpf, R D ^a   Pantelides, S T ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Noise; Oxide traps; Radiation effects; Thermally stimulated current

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; ELECTRON TRAPS; HOLE TRAPS; INTERFACES (MATERIALS); IRRADIATION; PROBABILITY DENSITY FUNCTION; RADIATION EFFECTS; SILICA; SPURIOUS SIGNAL NOISE;

ELECTRON CAPTURE;

MOS DEVICES;

EID: 0036953138     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805407     Document Type: Conference Paper

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