A comparison of fast methods for measuring NBTI degradation

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 4, 2007, Pages 531-539

  Reisinger, Hans ^a   Brunner, Ulrich ^a   Heinrigs, Wolfgang ^a   Gustin, Wolfgang ^a   Schlünder, Christian ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Measuring delay; MOSFET; Negative bias temperature instability (NBTI); pMOS; Recovery

Indexed keywords

DATA REDUCTION; DELAY CIRCUITS; MEASUREMENT ERRORS; STATISTICAL METHODS; TEMPERATURE MEASUREMENT;

MEASURING DELAYS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PMOS;

MOSFET DEVICES;

EID: 37548999696     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.911385     Document Type: Article

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