-
1
-
-
49549095752
-
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability,
-
T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, and B. Kaczer, "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability," in IIRW Final Report, 2007, p. 6.
-
(2007)
IIRW Final Report
, pp. 6
-
-
Grasser, T.1
Wagner, P.-J.2
Hehenberger, P.3
Gös, W.4
Kaczer, B.5
-
2
-
-
34247847473
-
T-Measurements
-
T-Measurements," in Proc. Int. Reliab. Phys. Symp., 2006, p. 448.
-
(2006)
Proc. Int. Reliab. Phys. Symp
, pp. 448
-
-
Reisinger, H.1
Blank, O.2
Heinrigs, W.3
Mühlhoff, A.4
Gustin, W.5
Schlünder, C.6
-
3
-
-
27744444546
-
Fast DNBTI Components in p-MOSFET With SiON Dielectric
-
T. Yang, C. Shen, M. F. Li, C. H. Ang, C. X. Zhu, Y.-C. Yeo, G. Samudra, S. C. Rustagi, M. B. Yu, and D.-L. Kwong, "Fast DNBTI Components in p-MOSFET With SiON Dielectric," in IEEE Electron Dev. Lett. 26, 2005, p. 826.
-
(2005)
IEEE Electron Dev. Lett
, vol.26
, pp. 826
-
-
Yang, T.1
Shen, C.2
Li, M.F.3
Ang, C.H.4
Zhu, C.X.5
Yeo, Y.-C.6
Samudra, G.7
Rustagi, S.C.8
Yu, M.B.9
Kwong, D.-L.10
-
4
-
-
0037634588
-
Dynamic NBTI of PMOS Transistors and Its Impact on Device Lifetime
-
G. Chen, K. Y. Chuah, M. F. Li, D. S. H. Chan, C. H. Ang, J. Z. Zheng, Y. Jin, and D. L. Kwong, "Dynamic NBTI of PMOS Transistors and Its Impact on Device Lifetime," in Proc. Int. Reliab. Phys. Symp., 2003, p. 196.
-
(2003)
Proc. Int. Reliab. Phys. Symp
, pp. 196
-
-
Chen, G.1
Chuah, K.Y.2
Li, M.F.3
Chan, D.S.H.4
Ang, C.H.5
Zheng, J.Z.6
Jin, Y.7
Kwong, D.L.8
-
5
-
-
0842309776
-
Universal Recovery Behavior of Negative Bias Temperature Instability
-
S. Rangan, N. Mielke, and E. C.C. Yeh, "Universal Recovery Behavior of Negative Bias Temperature Instability," in IEDM Tech. Digest,2003, p. 341.
-
(2003)
IEDM Tech. Digest
, pp. 341
-
-
Rangan, S.1
Mielke, N.2
Yeh, E.C.C.3
-
6
-
-
28744447129
-
Disorder-controlled-kinetics Model for Negative Bias Temperature Instability and Its Experimental Verification
-
B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, "Disorder-controlled-kinetics Model for Negative Bias Temperature Instability and Its Experimental Verification," in Proc. Int. Reliab. Phys. Symp., 2005, p. 381.
-
(2005)
Proc. Int. Reliab. Phys. Symp
, pp. 381
-
-
Kaczer, B.1
Arkhipov, V.2
Degraeve, R.3
Collaert, N.4
Groeseneken, G.5
Goodwin, M.6
-
7
-
-
17444419352
-
Temperature Dependence of the Negative Bias Temperature Instability in the Framework of Dispersive Transport
-
B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, "Temperature Dependence of the Negative Bias Temperature Instability in the Framework of Dispersive Transport," in Appl. Phys. Lett. 86, 2005, p. 143506.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 143506
-
-
Kaczer, B.1
Arkhipov, V.2
Degraeve, R.3
Collaert, N.4
Groeseneken, G.5
Goodwin, M.6
-
8
-
-
51549088662
-
The influence of recovery and temperature on the NBTI power-law exponent
-
San Diego
-
B. Kaczer, R. Degraeve, V. Arkhipov, N. Collaert, G. Groeseneken, M. Goodwin, "The influence of recovery and temperature on the NBTI power-law exponent," as discussed at the 35th IEEE SISC, San Diego, 2004.
-
(2004)
as discussed at the 35th IEEE SISC
-
-
Kaczer, B.1
Degraeve, R.2
Arkhipov, V.3
Collaert, N.4
Groeseneken, G.5
Goodwin, M.6
-
9
-
-
46049113552
-
th Transient in NBTI of pMOSFETs with SiON Dielectric
-
th Transient in NBTI of pMOSFETs with SiON Dielectric," in IEDM Tech. Digest, 2006, p. 333.
-
(2006)
IEDM Tech. Digest
, pp. 333
-
-
Shen, C.1
Li, M.-F.2
Foo, C.E.3
Yang, T.4
Huang, D.M.5
Yap, A.6
Samudra, G.S.7
Yeo, Y.-C.8
-
10
-
-
34548804466
-
The Universality of NBTI Relaxation and its Implications for Modeling and Characterization
-
T. Grasser, W. Gös, V. Sverdlov, and B. Kaczer, "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization," in Proc. Int. Reliab. Phys. Symp., 2007, p. 268.
-
(2007)
Proc. Int. Reliab. Phys. Symp
, pp. 268
-
-
Grasser, T.1
Gös, W.2
Sverdlov, V.3
Kaczer, B.4
-
11
-
-
51549121397
-
-
th Symp. On Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics, editors Sah, Deen, Zhang, Yota, and Kamakura, published by The Electrochemical Society, 2007, p. 265.
-
th Symp. On Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics," editors Sah, Deen, Zhang, Yota, and Kamakura, published by The Electrochemical Society, 2007, p. 265.
-
-
-
-
12
-
-
39549099287
-
Negative Bias Temperature Instability: Recoverable versus Permanent Degradation
-
T. Grasser and B. Kaczer, "Negative Bias Temperature Instability: Recoverable versus Permanent Degradation", in Proc. ESSDERC, 2007, p. 127.
-
(2007)
Proc. ESSDERC
, pp. 127
-
-
Grasser, T.1
Kaczer, B.2
-
13
-
-
49149106529
-
Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability
-
T. Grasser, B. Kaczer, P. Hehenberger, W. Gös, R. O'Connor, H. Reisinger, W. Gustin, and C. Schlünder, "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability," in IEDM Tech. Digest, 2007, p. 801.
-
(2007)
IEDM Tech. Digest
, pp. 801
-
-
Grasser, T.1
Kaczer, B.2
Hehenberger, P.3
Gös, W.4
O'Connor, R.5
Reisinger, H.6
Gustin, W.7
Schlünder, C.8
-
14
-
-
0035718531
-
A comparative study of dielectric relaxation losses in alternative dielectrics
-
H. Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, U. Schröder, H. Seidl, and D. Schumann, "A comparative study of dielectric relaxation losses in alternative dielectrics," in IEDM Tech. Digest, 2001, p. 267.
-
(2001)
IEDM Tech. Digest
, pp. 267
-
-
Reisinger, H.1
Steinlesberger, G.2
Jakschik, S.3
Gutsche, M.4
Hecht, T.5
Leonhard, M.6
Schröder, U.7
Seidl, H.8
Schumann, D.9
-
15
-
-
33846073476
-
A Semiclassical Model of Dielectric Relaxation in Glasses
-
J. R. Jameson, W. Harrison, P. B. Griffin, J. D. Plummer, and Y. Nishi, "A Semiclassical Model of Dielectric Relaxation in Glasses," in J. Appl. Phys. 100, 2006, p. 124101.
-
(2006)
J. Appl. Phys
, vol.100
, pp. 124101
-
-
Jameson, J.R.1
Harrison, W.2
Griffin, P.B.3
Plummer, J.D.4
Nishi, Y.5
-
16
-
-
37548999696
-
A Comparison of Fast Methods for Measuring NBTI Degradation
-
H. Reisinger, U. Brunner, W. Heinrigs, W. Gustin, and C. Schlünder, "A Comparison of Fast Methods for Measuring NBTI Degradation," in IEEE Trans. Dev. Mat. Rel. 7, 2007, p. 531.
-
(2007)
IEEE Trans. Dev. Mat. Rel
, vol.7
, pp. 531
-
-
Reisinger, H.1
Brunner, U.2
Heinrigs, W.3
Gustin, W.4
Schlünder, C.5
-
18
-
-
34250745882
-
New Insights into Recovery Characteristics Post NBTI Stress
-
C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, E. Vincent, and A. Bravaix, "New Insights into Recovery Characteristics Post NBTI Stress," in Proc. Int. Reliab. Phys. Symp, 2006, p. 471.
-
(2006)
Proc. Int. Reliab. Phys. Symp
, pp. 471
-
-
Parthasarathy, C.R.1
Denais, M.2
Huard, V.3
Ribes, G.4
Vincent, E.5
Bravaix, A.6
-
19
-
-
51549105957
-
Negative Bias Temperature Instability on Si-passivated Geinterface
-
M. Aoulaiche, B. Kaczer, B. De Jaeger, M. Houssa, K. Martens, R. Degraeve, P. Roussel, J. Mitard, S. De Gendt, H.E. Maes, G. Groeseneken, M. Meuris, and M.M. Heyns, "Negative Bias Temperature Instability on Si-passivated Geinterface," in Proc. Int. Reliab. Phys. Symp, 2008.
-
(2008)
Proc. Int. Reliab. Phys. Symp
-
-
Aoulaiche, M.1
Kaczer, B.2
De Jaeger, B.3
Houssa, M.4
Martens, K.5
Degraeve, R.6
Roussel, P.7
Mitard, J.8
De Gendt, S.9
Maes, H.E.10
Groeseneken, G.11
Meuris, M.12
Heyns, M.M.13
-
20
-
-
0842266651
-
A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs
-
M. A. Alam, "A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs," in IEDM Tech. Digest, 2003, p. 345.
-
(2003)
IEDM Tech. Digest
, pp. 345
-
-
Alam, M.A.1
-
21
-
-
34548259814
-
The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs
-
C. Guérin, V. Huard, and A. Bravaix, "The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs," in IEEE Trans. Dev. Mat. Rel. 7, 2007, p. 225.
-
(2007)
IEEE Trans. Dev. Mat. Rel
, vol.7
, pp. 225
-
-
Guérin, C.1
Huard, V.2
Bravaix, A.3
-
22
-
-
34250769453
-
Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies
-
M. Denais, A. Bravmx, V. Huard, C. Parthasarathy, C. Guerin, G. Ribes, F. Perrier, M. Mairy, and D. Roy, "Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies," in Proc. Int. Reliab. Phys. Symp, 2006, p. 735.
-
(2006)
Proc. Int. Reliab. Phys. Symp
, pp. 735
-
-
Denais, M.1
Bravmx, A.2
Huard, V.3
Parthasarathy, C.4
Guerin, C.5
Ribes, G.6
Perrier, F.7
Mairy, M.8
Roy, D.9
-
23
-
-
51949085647
-
Flexible and Robust CappingMetal Gate Integration Technology enabling multiple-VT CMOS in MuGFETs
-
A. Veloso, L. Witters, M. Demand, I. Ferain, N. J. Son, B. Kaczer, Ph. J. Roussel, E. Simoen, T. Kauerauf, C. Adelmann, S. Brus, O. Richard, H. Bender, T. Conard, R. Vos, R. Rooyackers, S. Van Elshocht, N. Collaert, K. De Meyer, S. Biesemans, and M. Jurczak, "Flexible and Robust CappingMetal Gate Integration Technology enabling multiple-VT CMOS in MuGFETs," to be presented at VLSI Symp., 2008.
-
(2008)
to be presented at VLSI Symp
-
-
Veloso, A.1
Witters, L.2
Demand, M.3
Ferain, I.4
Son, N.J.5
Kaczer, B.6
Roussel, P.J.7
Simoen, E.8
Kauerauf, T.9
Adelmann, C.10
Brus, S.11
Richard, O.12
Bender, H.13
Conard, T.14
Vos, R.15
Rooyackers, R.16
Van Elshocht, S.17
Collaert, N.18
De Meyer, K.19
Biesemans, S.20
Jurczak, M.21
more..
-
24
-
-
51949091876
-
T Tuneability on La/Dy-capping layer locations and Laser annealing conditions
-
T Tuneability on La/Dy-capping layer locations and Laser annealing conditions," to be presented at VLSI Symp., 2008.
-
(2008)
to be presented at VLSI Symp
-
-
Chang, S.Z.1
Hoffmann, T.Y.2
Yu, H.Y.3
Aoulaiche, M.4
Rohr, E.5
Adelmann, C.6
Kaczer, B.7
Delabie, A.8
Favia, P.9
Van Elshocht, S.10
Kubicek, S.11
Scharm, T.12
Witters, T.13
Ragnarsson, L.-A.14
Wang, X.P.15
Cho, H.-J.16
Mueller, M.17
Chiarella, T.18
Absil, P.19
Biesemans, S.20
more..
-
25
-
-
40549122135
-
Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation
-
A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A. Alam, "Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation," in IEEE T. Electron Dev. 54, 2007, p. 2143.
-
(2007)
IEEE T. Electron Dev
, vol.54
, pp. 2143
-
-
Islam, A.E.1
Kufluoglu, H.2
Varghese, D.3
Mahapatra, S.4
Alam, M.A.5
-
26
-
-
50649119425
-
The Fast Initial Threshold Voltage Shift: NBTI or High-Field Stress
-
J. P. Campbell, K. P. Cheung, J. S. Suehle, A. Oates, "The Fast Initial Threshold Voltage Shift: NBTI or High-Field Stress," in Proc. Int. Reliab. Phys. Symp, 2008.
-
(2008)
Proc. Int. Reliab. Phys. Symp
-
-
Campbell, J.P.1
Cheung, K.P.2
Suehle, J.S.3
Oates, A.4
-
27
-
-
46049120673
-
AC NBTI Studied in the 1 Hz - 2 GHz Range on Dedicated On-Chip CMOS Circuits
-
R. Fernández, B. Kaczer, A. Nackaerts, S. Demuynck, R. Rodriguez, M. Nafría, and G. Groeseneken, "AC NBTI Studied in the 1 Hz - 2 GHz Range on Dedicated On-Chip CMOS Circuits," in IEDM Tech. Digest, 2006, p. 337.
-
(2006)
IEDM Tech. Digest
, pp. 337
-
-
Fernández, R.1
Kaczer, B.2
Nackaerts, A.3
Demuynck, S.4
Rodriguez, R.5
Nafría, M.6
Groeseneken, G.7
-
28
-
-
34548777024
-
Understanding SRAM High-Temperature-Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage
-
A. Haggag, G. Anderson, S. Parihar, D. Burnett, G. Abeln, J. Higman, and M. Moosa, "Understanding SRAM High-Temperature-Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage," in Proc. Int. Reliab. Phys. Symp., 2007, p. 452.
-
(2007)
Proc. Int. Reliab. Phys. Symp
, pp. 452
-
-
Haggag, A.1
Anderson, G.2
Parihar, S.3
Burnett, D.4
Abeln, G.5
Higman, J.6
Moosa, M.7
-
29
-
-
51549101282
-
-
Ph.D. Thesis, RWTH Forschungszentrum Jülich, Germany
-
M. Schumacher, Ph.D. Thesis, RWTH Forschungszentrum Jülich, Germany, 1998.
-
(1998)
-
-
Schumacher, M.1
-
30
-
-
28844506128
-
NBTI Degradation: From Physical Mechanisms to Modelling
-
V. Huard, M. Denais, and C. Parthasarathy, "NBTI Degradation: From Physical Mechanisms to Modelling," in Microelectr. Reliab. 46, 2006, p. 1.
-
(2006)
Microelectr. Reliab
, vol.46
, pp. 1
-
-
Huard, V.1
Denais, M.2
Parthasarathy, C.3
-
31
-
-
33748510388
-
Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET
-
D. S. Ang and S. Wang, "Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET," in IEEE Electron Dev. Lett. 27, 2006, p. 755.
-
(2006)
IEEE Electron Dev. Lett
, vol.27
, pp. 755
-
-
Ang, D.S.1
Wang, S.2
-
32
-
-
38049027478
-
Effects of Measurement Temperature on NBTI
-
J. F. Zhang, M. H. Chang, and G. Groeseneken, "Effects of Measurement Temperature on NBTI," in IEEE Electron Dev. Lett. 28, 2007, p. 298.
-
(2007)
IEEE Electron Dev. Lett
, vol.28
, pp. 298
-
-
Zhang, J.F.1
Chang, M.H.2
Groeseneken, G.3
|