The universality of NBTI relaxation and its implications for modeling and characterization

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 268-280

  Grasser, Tibor ^a   Gös, Wolfgang ^a   Sverdlov, Victor ^b   Kaczer, Ben ^c  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; DIELECTRIC RELAXATION; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); REACTION DIFFUSION MODELS; RELAXATION PHASE;

SEMICONDUCTOR DEVICES;

EID: 34548804466     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369904     Document Type: Conference Paper

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