Discrete dopant effects on statistical variation of random telegraph signal magnitude

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1918-1925

  Sonoda, Ken'ichiro ^a   Ishikawa, Kiyoshi ^a   Eimori, Tajahisa ^b   Tsuchiya, Osamu ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Charge carrier processes; MOSFETs; Random noise; Semiconductor device modeling; Semiconductor device noise

Indexed keywords

CHARGE CARRIERS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS; TELEGRAPH; THRESHOLD VOLTAGE;

DISCRETE CHANNEL DOPANT EFFECTS; LOG-NORMAL DISTRIBUTION; RANDOM TELEGRAPH SIGNAL;

MOSFET DEVICES;

EID: 34547890984     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.900684     Document Type: Article

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