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Volumn 88, Issue 7, 2011, Pages 1243-1246

Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

b IMEC (Belgium)

Author keywords

Capture time; Emission time; High k dielectric; MOSFET; NBTI; nFET; PBTI; pFET; Trap

Indexed keywords

CAPTURE TIME; EMISSION TIME; HIGH-K DIELECTRIC; MOS-FET; NBTI; NFET; PBTI; PFET; TRAP;

DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; MESFET DEVICES; POWER QUALITY; SILICON COMPOUNDS;

BIAS VOLTAGE;

EID: 79958031807 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.097 Document Type: Conference Paper

Times cited : (46)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.