Observations of NBTI-induced atomic-scale defects

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 2, 2006, Pages 117-122

  Campbell, Jason P ^a,b   Lenahan, Patrick M ^a,b   Krishnan, Anand T ^a,c   Krishnan, Srikanth ^a,c  

^a IEEE   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Interface defects; Magnetic resonance; MOSFET; Negative bias temperature instability (NBTI); Spin dependent recombination (SDR)

Indexed keywords

BOND CENTERS; INTERFACE DEFECTS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); SPIN-DEPENDENT RECOMBINATION (SDR);

DIODES; GATES (TRANSISTOR); MOSFET DEVICES; PARAMAGNETIC RESONANCE; SILICON COMPOUNDS; TEMPERATURE MEASUREMENT; THERMODYNAMIC STABILITY;

DEFECTS;

EID: 33748111476     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.876598     Document Type: Conference Paper

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