High-κ related reliability issues in advanced non-volatile memories

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1251-1258

  Larcher, L ^a   Padovani, A ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DIELECTRIC STACK; DIELECTRIC THICKNESS; DISCRETE CHARGE STORAGE; ENGINEERED BARRIERS; FLASH MEMORY DEVICES; MATERIAL PROPERTY; MEMORY DEVICE; NON-VOLATILE MEMORIES; PHYSICAL MECHANISM; PROGRAM/ERASE; RELIABILITY DEGRADATION; SCALE DOWN; TECHNOLOGY SOLUTIONS;

CHARGE TRAPPING; DEGRADATION; DIELECTRIC MATERIALS; FLASH MEMORY;

RELIABILITY;

EID: 79958032808     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.099     Document Type: Conference Paper

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