Charge-trapping-type flash memory device with stacked high-κ charge-trapping layer

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 775-777

  Tsai, Ping Hung ^a   Chang Liao, Kuei Shu ^a   Liu, Te Chiang ^a   Wang, Tien Ko ^a   Tzeng, Pei Jer ^b   Lin, Cha Hsin ^b   Lee, L S ^a   Tsai, Ming Jinn ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Charge trapping layer; Charge trapping type; Flash memory; HfAlO; HfO2; Stacked

Indexed keywords

CHARGE-TRAPPING LAYER; CHARGE-TRAPPING TYPE; HFALO; HFO2; STACKED;

ENERGY GAP; FLASH MEMORY; HAFNIUM COMPOUNDS;

CHARGE TRAPPING;

EID: 67650423946     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2022287     Document Type: Article

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