Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices

Solid-State Electronics

Volumn 49, Issue 11 SPEC. ISS., 2005, Pages 1833-1840

  Buckley, J ^a   De Salvo, B ^a   Ghibaudo, G ^b   Gely, M ^a   Damlencourt, J F ^a   Martin, F ^a   Nicotra, G ^c   Deleonibus, S ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c CNR IMM   (Italy)

Author keywords

HfO2; High k; Tunnel oxide

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; HAFNIUM COMPOUNDS; MOS DEVICES; MULTILAYERS; PERMITTIVITY; SILICA;

GATE STACKS; HFO2; HIGH-K; TUNNEL OXIDES;

NONVOLATILE STORAGE;

EID: 28044459163     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.005     Document Type: Conference Paper

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