Pd-nanocrystal-based nonvolatile memory structures with asymmetric SiO 2/HfO2 tunnel barrier

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Seol, Kwang Soo ^a   Choi, Seong Jae ^a   Choi, Jae Young ^a   Jang, Eun Joo ^a   Kim, Byung Ki ^a   Park, Sang Jin ^a   Cha, Dea Gil ^a   Song, In Yong ^a   Park, Jong Bong ^a   Park, Youngsoo ^a   Choi, Suk Ho ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDS; ELECTRIC CHARGE; HAFNIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; PALLADIUM; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

ASYMMETRIC TUNNEL BARRIER (ATB); DATA RETENTION; MEMORY STRUCTURES; PD NANOCRYSTALS;

NONVOLATILE STORAGE;

EID: 33747831053     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335677     Document Type: Article

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