Silicon-oxide-nitride-oxide-silicon-type flash memory with a high- k NdTi O3 charge trapping layer

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Pan, Tung Ming ^a   Yu, Te Yi ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; FLASH MEMORY; NITRIDES; PROBABILITY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE-VOLTAGE CURVES; CHARGE LOSS; INTERFACIAL LAYERS; VOLTAGE SHIFT;

SILICA;

EID: 41049085146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2898215     Document Type: Article

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