Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1246-1253

  Larcher, Luca ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Flash memories; Leakage currents; Modeling; MOS device; Oxide reliability; Semiconductor device reliability; Stress induced leakage current (SILC)

Indexed keywords

ELECTRON ENERGY LEVELS; FLASH MEMORY; GATES (TRANSISTOR); MOS DEVICES; OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

FLASH MEMORY GATE OXIDE; GATE OXIDES; MULTIPHONON TRAP ASSISTED TUNNELING MODEL; RANDOM NUMBER GENERATOR; STATISTICAL SIMULATION;

LEAKAGE CURRENTS;

EID: 0043175221     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813236     Document Type: Article

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