BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 547-550

  Lue, Hang Ting ^a   Wang, Szu Yu ^b   Lai, Erh Kun ^a   Shih, Yen Hao ^a   Lai, Sheng Chih ^a   Yang, Ling Wu ^b   Chen, Kuang Chao ^b   Ku, Joseph ^b   Hsieh, Kuang Yeu ^a   Liu, Rieh ^a   Lu, Chih Yuan ^a  

^a Emerging Central Lab   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTRIC FIELDS; ENERGY GAP; LOGIC DEVICES; MULTILAYERS;

BAND OFFSET; BLOCKING OXIDE; DEPLETION MODE DEVICE; HOLE TUNNELING;

DIELECTRIC DEVICES;

EID: 33847734692     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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