메뉴 건너뛰기




Volumn , Issue , 2006, Pages 234-237

Reliability comparison of Al2O3 and HfSiON for use as interpoly dielectric in flash arrays

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CMOS INTEGRATED CIRCUITS; DATA ACQUISITION; RELIABILITY ANALYSIS;

EID: 84943197764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307681     Document Type: Conference Paper
Times cited : (12)

References (8)
  • 2
    • 85080661275 scopus 로고    scopus 로고
    • M. van Duuren, R. van Schaijk, M. Slotboom, P. Tello, N. Akil, A. Huerta Miranda and D. Golubovic, Pushing the scaling limits of embedded non-volatile memories with high-K materials, to be published at the ICICTD 2006.
    • M. van Duuren, R. van Schaijk, M. Slotboom, P. Tello, N. Akil, A. Huerta Miranda and D. Golubovic, "Pushing the scaling limits of embedded non-volatile memories with high-K materials", to be published at the ICICTD 2006.
  • 4
    • 33644516921 scopus 로고    scopus 로고
    • Aluminium oxide tunnel barriers for single electron memory devices
    • K.K. Yadavalli, A.O. Orlov, G.L. Snider and J. Elam, "Aluminium oxide tunnel barriers for single electron memory devices", Microelectronics Journal 36 , 2005, pp. 272-276.
    • (2005) Microelectronics Journal , vol.36 , pp. 272-276
    • Yadavalli, K.K.1    Orlov, A.O.2    Snider, G.L.3    Elam, J.4
  • 5
    • 28744456880 scopus 로고    scopus 로고
    • Jan Van Houdt, High-K materials for nonvolatile memory application IEEE, Physics Symposium, San Jose, 2005, pp. 234-239. L. Manchanda, B. Busch, M.L. Green, M. Morris, R.B. van Dover, R. Kwo and S. Aravamudhan, High-K gate dielectrics for silicon industry, IWGI, 2001, Tokyo.
    • Jan Van Houdt, "High-K materials for nonvolatile memory application" IEEE, Physics Symposium, San Jose, 2005, pp. 234-239. L. Manchanda, B. Busch, M.L. Green, M. Morris, R.B. van Dover, R. Kwo and S. Aravamudhan, "High-K gate dielectrics for silicon industry", IWGI, 2001, Tokyo.
  • 6
    • 21244460756 scopus 로고    scopus 로고
    • 3-Nitrided Bottom Poly-Si for Next-Generatons Flash Memories
    • 3-Nitrided Bottom Poly-Si for Next-Generatons Flash Memories", Jpn. J. Appl. Phys., vol. 44, no 4A, 2005, pp. 1704-1710.
    • (2005) Jpn. J. Appl. Phys , vol.44 , Issue.4 A , pp. 1704-1710
    • Chen, Y.-Y.1    Chien, C.-H.2    Lou, J.-C.3
  • 7
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics: Current status and materials properties considerations
    • G. D. Wilk, R. M. Wallace and J. M.Anthony, "High-k gate dielectrics: Current status and materials properties considerations", J. Appl. Phys., vol. 89, no. 10, pp. 5243-5273.
    • J. Appl. Phys , vol.89 , Issue.10 , pp. 5243-5273
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 8
    • 33751051149 scopus 로고    scopus 로고
    • 3) Interpoly Dielectric, Proc. NVSMW 2006, pp. 52-53.
    • 3) Interpoly Dielectric", Proc. NVSMW 2006, pp. 52-53.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.