High-performance high-k Y2O3 SONOS-type flash memory

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2354-2360

  Pan, Tung Ming ^a   Yeh, Wen Wei ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Charge trapping layer; Data retention; Drain disturb; Endurance; Gate disturb; memory window; Poly Si oxide nitride oxide silicon (SONOS); Read disturb; Y silicate; Y2O3

Indexed keywords

CHARGE TRAPPING LAYER; DATA RETENTION; DRAIN DISTURB; ENDURANCE; GATE DISTURB; MEMORY WINDOW; POLY-SI-OXIDE-NITRIDE-OXIDE-SILICON (SONOS); READ DISTURB; Y-SILICATE; Y2O3;

EID: 50549084617     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.927401     Document Type: Article

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