Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2746-2751

  He, Wei ^a   Pu, Jing ^a   Chan, Daniel S H ^a   Cho, Byung Jin ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Blocking oxide; Lanthanum aluminum oxide; Lanthanum hafnium oxide; Nitride; SONOS; Trapping energy depth

Indexed keywords

BLOCKING OXIDE; CHARGE TRAP; CONDUCTION BAND EDGE; CONDUCTION BAND OFFSET; FLASH MEMORY DEVICES; PERFORMANCE IMPROVEMENTS; RETENTION PROPERTIES; SONOS; TRAPPING ENERGY; TRAPPING ENERGY DEPTH; VOLTAGE STRESS;

ALUMINA; ALUMINUM; CONDUCTION BANDS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; FLASH MEMORY; HAFNIUM; HAFNIUM COMPOUNDS; HETEROJUNCTIONS; LANTHANUM; NITRIDES; OXIDES; SOLID-STATE SENSORS; WINDOWS;

LANTHANUM ALLOYS;

EID: 70350721642     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030833     Document Type: Article

References (18)

1. S. S. Chung, P.-Y. Chiang, G. Chou, C.-T. Huang, P. Chen, C.-H. Chu, and C. C.-H. Hsu, "A novel leakage current separation technique in a direct tunneling regime gate oxide SONOS memory cell," in IEDM Tech. Dig. Washington, DC, 2005, pp. 617-622.
2. 3 for high-density Flash memory," Appl. Phys. Lett., vol. 86, no. 15, p. 152 908, Apr. 2005.
3. Y. J. Zhao, X. N. Wang, H. L. Shang, and M. H. White, "A low voltage SANOS nonvolatile semiconductor memory (NVSM) device," Solid State Electron., vol. 50, no. 9/10, pp. 1667-1669, Sep./Oct. 2006.
4. T. Erlbacher, A. J. Bauer, and H. Ryssel, "Hafnium silicate as control oxide in non-volatile memories," Microelectron. Eng., vol. 84, no. 9/10, pp. 2239-2242, Sep./Oct. 2007.
5. 2/HfAlO/HfSiO/HfAlO gate stack for memory application," in IEDM Tech. Dig., Washington, DC, 2005, pp. 162-165.
6. 7 high-k gate dielectric grown directly on Si(100) by molecular-beam epitaxy," Appl. Phys. Lett., vol. 85, no. 15, p. 3205, Oct. 2004.
7. x prepared by atomic layer deposition," J. Electrochem. Soc., vol. 155, no. 10, pp. 189-193, 2008.
8. G. Vellianitis, G. Zpostolopoulos, G. Mavrou, K. Aryropoulos, A. Dimoulas, J. C. Hooker, T. Conard, and M. Butcher, "MBE lanthan-umbased high-k gate dielectrics as candidates for SiO2 gate oxide replacement," Mater. Sci. Eng. B, vol. 109, no. 1-3, pp. 85-88, Jun. 2004.
9. P. W. Peacock and J. Robertson, "Band offsets and Schottky barrier heights of high dielectric constant oxides," J. Appl. Phys., vol. 92, no. 8, pp. 4712-4721, Oct. 2002.
10. Y. Yang and M. H. White, "Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures," Solid State Electron., vol. 44, no. 6, pp. 949-958, Jun. 2000.
11. S. J. Wrazien, Y. Zhao, J. D. Krayer, and M. H. White, "Characterization of SONOS oxynitride nonvolatile semiconductor memory devices," Solid State Electron., vol. 47, no. 5, pp. 858-891, May 2003.
12. T. H. Kim, J. S. Sim, J. D. Lee, H. C. Shin, and B.-G. Park, "Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution," Appl. Phys. Lett., vol. 85, no. 4, pp. 660-662, Jul. 2004.
13. 3 insertion," Solid State Electron. vol. 52, no. 9, pp. 1280-1284, Sep. 2008.
14. 2/Si capacitors," Jpn. J. Appl. Phys., vol. 46, no. 11, pp. 7251-7255, Nov. 2007.
15. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, "Precise determination of the valence-band edge in X-ray photoemission spectra: Application to measurement of semiconductor interface potentials," Phys. Rev. Lett., vol. 44, no. 24, pp. 1620-1623, 1980.
16. J. Robertson, "Band offsets of wide-band-gap oxides and implications for future electronic devices," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 18, no. 3, pp. 1785-1791, May 2000.
17. S.-H. Gu, T. Wang, W.-P. Lu, Y.-H. J. Ku, and C.-Y. Lu, "Extraction of nitride trap density from stress induced leakage current in silicon-oxide-oxide-silicon Flash memory," Appl. Phys. Lett., vol. 89, no. 16, p. 163 514, Oct. 2006.
18. T. Mine, K. Fujisaki, T. Ishida, Y. Shimamoto, R. Yamada, and K. Torii, "Electron trap characteristics of silicon rich silicon nitride thin films," Jpn. J. Appl. Phys., vol. 46, no. 5B, pp. 3206-3210, May 2007.