Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

  Oh, Se Man ^a   You, Hee wook ^a   Kim, Kwan Su ^a   Lee, Young Hie ^a   Cho, Won Ju ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Al2O3; CTF; HfO2; NVM; TBE

Indexed keywords

BLOCKING LAYERS; CHARGE TRAP; CHARGE TRAP FLASH MEMORIES; DATA RETENTION; DATA RETENTION TIME; ELECTRICAL PROPERTY; GATE ELECTRODES; HIGH WORK FUNCTION; MEMORY DEVICE; NON-VOLATILE MEMORIES; PROGRAM/ERASE; QUANTUM MECHANICAL; RETENTION CHARACTERISTICS; TUNNEL BARRIER; TUNNEL MODEL;

ALUMINUM; CHARGE TRAPPING; DATA REDUCTION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; PLATINUM; SILICON COMPOUNDS; WIND TUNNELS;

FLASH MEMORY;

EID: 77649231349     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.005     Document Type: Article

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