Write/Erase cycling endurance of memory cells with SiO2/HfO 2 Tunnel Dielectric

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 345-351

  Blomme, Pieter ^a   Van Houdt, Jan ^b   De Meyer, Kristin ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Cycling endurance; Flash nonvolatile memory; High k tunnel dielectric; HIMOS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FLASH MEMORY; HAFNIUM COMPOUNDS; NAND CIRCUITS; SILICA;

CYCLING ENDURANCE; FLASH NONVOLATILE MEMORY; HIGH-Κ TUNNEL DIELECTRIC; HIMOS;

ELECTRON TUNNELING;

EID: 11144223238     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.837120     Document Type: Article

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