High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 45-48

  Liu, Yanxiang ^a   Shim, Sun Il ^a   Wang, X W ^a   Lee, Lurng Shehng ^b   Tsai, Ming Jinn ^b   Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Crested barrier; Flash memory; HfON; High k; Tunnel dielectric

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; FLASH MEMORY; PHYSICAL VAPOR DEPOSITION; PLASMA JETS;

MOLECULAR ATOMIC DEPOSITION (MAD); TUNNEL BARRIERS; TUNNEL DIELECTRICS;

HAFNIUM COMPOUNDS;

EID: 36148963642     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.008     Document Type: Article

References (4)

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4. Y. Liu, Proceedings of IEEE SISC, 2006.