Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

  Kang, Hae yoon ^a   Heo, Min young ^a   Sohn, Hyun chul ^a  

^a Yonsei University   (South Korea)

Author keywords

High k dielectric; Memory; Nonvolatile; Tunnel barrier; Zr silicate

Indexed keywords

BAND GAPS; BAND-OFFSET; BI-LAYER; CHARGE TRAP; ELECTRICAL CHARACTERISTIC; GATE BIAS; HIGH GATE BIAS; HIGH-K DIELECTRIC; NON-VOLATILE; SILICATE FILM; STRUCTURAL STABILITIES; TUNNEL BARRIER; TUNNEL CURRENTS; TUNNELING CHARACTERISTICS;

AMORPHOUS FILMS; SILICATES; STABILITY; WIND TUNNELS; ZIRCONIUM;

ZIRCONIUM ALLOYS;

EID: 77649231653     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.006     Document Type: Article

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