Lateral charge transport in the nitride layer of the NROM non-volatile memory device

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 426-433

  Shappir, Assaf ^a   Shacham Diamand, Yosi ^a   Lusky, Eli ^b   Bloom, Ilan ^b   Eitan, Boaz ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b Saifun Semiconductors Ltd   (Israel)

Author keywords

Nitride; Non volatile memory; NROM; ONO

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; ELECTRIC FIELDS; ELECTRON TRAPS; ELECTRONS; GATES (TRANSISTOR); HOLE TRAPS; NONVOLATILE STORAGE; SILICON NITRIDE; THRESHOLD VOLTAGE;

PROGRAM/ERASE CYCLES; VERTICAL CHARGE TUNNELING;

ROM;

EID: 1642587312     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.025     Document Type: Conference Paper

References (13)

1. Yang Y.L., White M.H. Solid-State Electron. 44:2000;949-958.
2. Swift C.T., Chindalore G.L., Harber K., Harp T.S., Hoefler A., Hong C.M., Ingersoll P.A., Li C.B., Prinz E.J., Yater J.A. IEDM Tech. Dig. 2002;927-930.
3. S. Habermehl, R.D. Nasby, M. Rightley, P.R. Mahl, Proc. IEEE NVSMW, Monterey, CA, 1998, p. 66.
4. Eitan B., Pavan P., Bloom I., Aloni E., Frommer A., Finzi D. IEEE Electron Dev. Lett. 21:2000;543-545.
5. Eitan B., Frohman D. IEEE Trans. Electron Dev. 28:1981;328-340.
6. Lusky E., Shacham-Diamand Y., Bloom I., Eitan B. IEEE Electron Dev. Lett. 23:2002;556-558.
7. Tsai W.J., Zous N.K., Liu C.J., Chen C.H., Wang T., Pan S., Lu C.Y. IEDM Tech. Digest. 2001;719-722.
8. Chan T.Y., Chen J., Ko P.K., Hu C. IEDM Tech. Digest. 1987;718-721.
9. Lusky E., Shacham-Diamand Y., Bloom I., Eitan B. IEEE Electron Dev. Lett. 22:2001;556-558.
10. E. Lusky, The spatial distribution and emission mechanisms of locally trapped charge in oxide-nitride-oxide stacked dielectrics for non-volatile semiconductor memories, Ph.D. Thesis, Department of Physical Electronics, Tel-Aviv University, 2002.
11. Suzuki E., Hayashi Y., Ishi K., Tsuchiya T. Appl. Phys. Lett. 42:1983;608-610.
12. Lundkvist L., Lundstrom I., Svensson C. Solid-State Electron. 7:1973;221-227.
13. Janai M. IEEE Proc. IRPS. 2003;502-505.