The two-bit NROM reliability

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 397-403

  Shappir, Assaf ^a   Lusky, Eli ^a   Cohen, Guy ^a   Bloom, Ilan ^a   Janai, Meir ^a   Eitan, Boaz ^a  

^a Saifun Semiconductors Ltd   (Israel)

Author keywords

Nitride; Nonvolatile memory; NROM; ONO; Two bits per cell

Indexed keywords

ALGORITHMS; DATA STORAGE EQUIPMENT; FLASH MEMORY; MOSFET DEVICES; OPTIMIZATION; RELIABILITY; THRESHOLD VOLTAGE;

NROM; OXIDE-NITRIDE-OXIDE (ONO); POTENTIAL BARRIERS; TWO-BITS-PER-CELL;

ROM;

EID: 11144234851     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.836717     Document Type: Article

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