Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1804-1806

  Chang, Man ^a   Kim, Tae Wook ^a   Lee, Joonmyoung ^a   Jo, Minseok ^a   Kim, Seonghyun ^a   Jung, Seungjae ^a   Choi, Hyejung ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Band bending; Charge loss; MANOS; Metal gate; Retention

Indexed keywords

BAND BENDING; CHARGE LOSS; MANOS; METAL GATE; RETENTION;

ALUMINUM; ELECTRIC FIELDS; METALS; NITRIDES; PLATINUM; SILICON COMPOUNDS; SILICON OXIDES;

FLASH MEMORY;

EID: 67349176413     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.033     Document Type: Article

References (16)

1. C.-H. Lee, J. Choi, Y. Park, C. Kang, B.-I. Choi, H. Kim, H. Oh, W.-S. Lee, in: Symp. on VLSI Technology, 2008, p. 118.
2. R. Ohba, Y. Mitani, N. Sugiyama, S. Fujita, in: Tech. Dig. Int. Electron Dev. Meet., 2008, p. 839.
3. Jeon S., Han J.H., Lee J.H., Choi S., Hwang H., and Kim C. IEEE Trans. Electron Dev. 52 (2005) 2654
4. H.-T. Lue, T.-H. Hsu, S.C. Lai, Y.H. Hsiao, W.C. Peng, C.W. Liao, Y.F. Huang, S.P. Hong, M.T. Wu, F.H. Hsu, N.Z. Lien, S.Y. Wang, L.W. Yang, T. Yang, K.C. Chen, K.Y. Hsieh, R. Liu, C.Y. Lu, in: Symp. on VLSI Technology, 2008, p. 116.
5. Lee C.-H., Park K.-C., and Kim K. Appl. Phys. Lett. 87 (2005) 073510-1
6. S. Choi, S.J. Baik, J.-T. Moon, in: Tech. Dig. Int. Electron Dev. Meet., 2008, p. 925.
7. M. She, H. Takeuchi, T.-J. King, in: IEEE Proc. 20th Non-Volatile Semiconductor Memory Workshop (NVSMW), 2003, p. 53.
8. Chang M., Hasan M., Jung S., Park H., Jo M., Choi H., and Hwang H. Appl. Phys. Lett. 91 (2007) 192111
9. S.M. Sze, Physics of Semiconductor Devices, second ed., Wiley, New York, p. 395.
10. Yang Y., and White M.H. Solid-State Electron. 44 (2000) 949
11. Wang G., and White M.H. Solid-State Electron. 52 (2008) 1473
12. Kim T.H., Sim J.S., Lee J.D., Shim H.C., and Park B.-G. Appl. Phys. Lett. 85 (2004) 660
13. Tzeng S.-D., and Gwo S. J. Appl. Phys. 100 (2006) 023711
14. Jeon S., and Kim C. Electrochem. Solid-State Lett. 9 (2006) G265
15. Chang M., Ju Y., Lee J., Jung S., Choi H., Jo M., Jeon S., and Hwang H. Appl. Phys. Lett. 93 (2008) 022101
16. Furnémont A., Cacciato A., Breuil L., Rosmeulen M., Maes H., Meyer K.D., and Houdt J.V. Solid-State Electron. 52 (2008) 577