Role of holes and electrons during erase of TANOS memories: Evidences for dipole formation and its impact on reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 731-737

  Vandelli, Luca ^a   Padovani, Andrea ^a   Larcher, Luca ^a   Arreghini, Antonio ^b   Van Den Bosch, Geert ^b   Jurczak, Malgorzata ^b   Van Houdt Senor, Jan ^b   Marca, Vincenzo Della ^a   Pavan, Paolo ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b IMEC   (Belgium)

Author keywords

Charge dipole; Charge separation; Charge trapping devices; Nitride; TANOS erase; TANOS memories

Indexed keywords

CHARGE DIPOLE; CHARGE SEPARATIONS; CHARGE-TRAPPING DEVICES; TANOS ERASE; TANOS MEMORIES;

HYDROPHOBICITY; NITRIDES;

RELIABILITY;

EID: 77956169854     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488743     Document Type: Conference Paper

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