A novel fluorine incorporated band engineered (BE) tunnel (SiO 2/HfSiO/SiO2) TANOS with excellent program/erase & endurance to 105 cycles

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Verma, Sarves ^a,b   Bersuker, Gennadi ^a   Gilmer, David C ^a   Padovani, Andrea ^c   Park, Hokyung ^a   Nainani, Aneesh ^b   Heh, Dawei ^a   Huang, Jeff ^a   Jiang, Jack ^e   Parat, Krishna ^d   Kirsch, Paul D ^a   Larcher, Luca ^c   Tseng, Hsing Huang ^a   Saraswat, Krishna C ^b   Jammy, Raj ^a  

^a SEMATECH   (United States)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d INTEL CORPORATION   (United States)

^e Freescale Semiconductors ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK TRAPS; FLUORINE PASSIVATION; INTERFACE STATE; INTERFACE STATE DENSITY; PROGRAM/ERASE; TUNNEL DIELECTRICS; TUNNEL OXIDE];

DURABILITY; PASSIVATION; SILICON COMPOUNDS; WIND TUNNELS;

FLUORINE;

EID: 70350020565     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090575     Document Type: Conference Paper

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