Metal-oxide-high-κ dielectric-oxide-semiconductor (MOHOS) capacitors and field-effect transistors for memory applications

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 964-966

  Hsu, Hsin Hao ^a   Chang, Ingram Yin Ku ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Dy2O3; HfO2; Memory window; Metal oxide High dielectric oxide silicon (MOHOS); Retention time

Indexed keywords

CAPACITORS; CONDUCTION BANDS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; MOS DEVICES; SEMICONDUCTING SILICON;

DIELECTRIC-OXIDE SILICON CAPACITORS; MEMORY WINDOW; RETENTION TIME;

DATA STORAGE EQUIPMENT;

EID: 36148939193     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906797     Document Type: Article

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