Study of the charge-trapping characteristics of silicon-rich nitride thin films using the gate-sensing and channel-sensing (GSCS) method

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 883-886

  Lu, Chi Pin ^a   Hsieh, Jung Yu ^a   Du, Pei Ying ^a   Lue, Hang Ting ^a   Yang, Ling Wu ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Capture efficiency; Charge de trapping; Charge trapping flash; Data retention; Silicon rich nitride

Indexed keywords

ANALYTICAL RESULTS; CAPTURE EFFICIENCY; CHARGE CENTROID; CHARGE DE-TRAPPING; CHARGE TRAPPING CHARACTERISTICS; DATA RETENTION; DE-TRAPPING; GATE-SENSING AND CHANNEL-SENSING; NITRIDE LAYERS; NITRIDE THIN FILMS; TRAP SITES; TRAPPED ELECTRONS;

ANTENNA LOBES; DANGLING BONDS; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILMS;

CHARGE TRAPPING;

EID: 70449094578     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173371     Document Type: Conference Paper

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