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Volumn 51, Issue 10, 2004, Pages 1636-1643

Statistical simulations for Flash memory reliability analysis and prediction

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; RELIABILITY THEORY; SEMICONDUCTOR STORAGE; STATISTICAL METHODS; THRESHOLD VOLTAGE;

EID: 5444274648     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.835023     Document Type: Article
Times cited : (11)

References (13)
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  • 2
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    • Statistical simulations of leakage currents in MOS and Flash memory devices with a new multiphonon trap-assisted tunneling model
    • May
    • L. Larcher, "Statistical simulations of leakage currents in MOS and Flash memory devices with a new multiphonon trap-assisted tunneling model," IEEE Trans. Electron Devices, vol. 50, pp. 1246-1253, May 2003.
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    • Larcher, L.1
  • 3
    • 0036475502 scopus 로고    scopus 로고
    • A new compact DC model of FG memory cells without capacitive coupling coefficients
    • Feb
    • L. Larcher, P. Pavan, S. Pietri, L. Albani, and A. Marmiroli, "A new compact DC model of FG memory cells without capacitive coupling coefficients," IEEE Trans. Electron Devices, vol. 49, pp. 301-307, Feb. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 301-307
    • Larcher, L.1    Pavan, P.2    Pietri, S.3    Albani, L.4    Marmiroli, A.5
  • 4
    • 0035340351 scopus 로고    scopus 로고
    • A new model of gate capacitance as a simple tool to extract MOS parameters
    • May
    • L. Larcher, P. Pavan, F. Pellizzer, and G. Ghidini, "A new model of gate capacitance as a simple tool to extract MOS parameters," IEEE Trans. Electron Devices, vol. 48, pp. 935-945, May 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 935-945
    • Larcher, L.1    Pavan, P.2    Pellizzer, F.3    Ghidini, G.4
  • 5
    • 0842331402 scopus 로고    scopus 로고
    • Statistical simulations to inspect and predict data retention and program disturbs in Flash memories
    • L. Larcher and P. Pavan, "Statistical simulations to inspect and predict data retention and program disturbs in Flash memories," in IEDM Tech. Dig., 2003, pp. 165-168.
    • (2003) IEDM Tech. Dig. , pp. 165-168
    • Larcher, L.1    Pavan, P.2
  • 6
    • 0033080327 scopus 로고    scopus 로고
    • A new I-V model for stress-induced leakage current including inelastic tunneling
    • Feb
    • S. Takagi, N. Yasuda, and A. Toriumi, "A new I-V model for stress-induced leakage current including inelastic tunneling," IEEE Trans. Electron Devices, vol. 46, pp. 348-354, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 348-354
    • Takagi, S.1    Yasuda, N.2    Toriumi, A.3
  • 8
    • 0034430482 scopus 로고    scopus 로고
    • Modeling trap generation process in thin oxides
    • G. Bersuker, Y. Jeon, G. Gale, J. Guan, and H. R. Huff, "Modeling trap generation process in thin oxides," in Proc. IRW, 2000, pp. 107-111.
    • (2000) Proc. IRW , pp. 107-111
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  • 10
    • 0036089046 scopus 로고    scopus 로고
    • A new reliability model for post-cycling charge retention of Flash memories
    • Dallas, TX
    • H. P. Belgal, N. Righos, I. Kalastirsky, J. J. Peterson, R. Shiner, and N. Mielke, "A new reliability model for post-cycling charge retention of Flash memories," in Proc. IRPS, Dallas, TX, 2002, pp. 7-20.
    • (2002) Proc. IRPS , pp. 7-20
    • Belgal, H.P.1    Righos, N.2    Kalastirsky, I.3    Peterson, J.J.4    Shiner, R.5    Mielke, N.6
  • 11
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    • Physical description of anoumaluos charge loss in floating gate based NVM's and identification of its dominant parameter
    • Dallas, TX
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.