Effects of lateral charge spreading on the reliability of TANOS (TaN/AIO/SiN/Oxide/Si) NAND flash memory

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 167-170

  Kang, Changseok ^a   Choi, Jungdal ^a   Sim, Jaesung ^a   Lee, Changhyun ^a   Shin, Yoocheol ^a   Park, Jintaek ^a   Sel, Jongsun ^a   Jeon, Sanghun ^a   Park, Youngwoo ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Charge loss; Charge spreading; Endurance; Flash memory; NAND; TANOS

Indexed keywords

CHARGE TRAPPING; DRAIN CURRENT; DURABILITY; ELECTRIC LOSSES; GATE DIELECTRICS; NAND CIRCUITS;

CHARGE LOSS; CHARGE SPREADING; GATE STRUCTURES; TRAP LAYERS;

FLASH MEMORY;

EID: 34548754508     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369887     Document Type: Conference Paper

References (5)

1. Kinam Kim and Jungdal Choi, "Future Outlook of NAND Flash Technology for 40nm Node and Beyond", IEEE, NVSMW, pp. 9-11, 2006.
2. Yuchoel Shin, et al., "A Novel NAND-type MONOS Memory using 63nm Process Technology for Multi-Gigabit Flash EEPRPOMs", IEDM Tech. Dig., pp. 337 - 340, 2005.
3. 3-TaN) Cell Technology", IEDM Tech. Dig., pp. 29-31, 2006.
4. Hang-Ting Lue, et al., "Reliability Model of Bandgap Engineered SONOS (BE-SONOS)", IEDM Tech. Dig., pp.495-498, 2006.
5. N. K. Zous, et al., "Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology", IEEE Electron Device Letters, Vol. 25, No. 9, 2004.