Charge loss in TANOS devices caused by Vt sensing measurements during retention

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Park, H ^a   Bersuker, G ^a   Gilmer, D ^a   Lim, K Y ^a   Jo, M ^b   Hwang, H ^b   Padovani, A ^c   Larcher, L ^c   Pavan, P ^c   Taylor, W ^a   Kirsch, P D ^a  

^a SEMATECH   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; CHARGE TRANSPORT;

SILICON COMPOUNDS;

EID: 77957908492     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488409     Document Type: Conference Paper

References (7)

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5. M. Chang et al., APL, 2008
6. C. D. Young et al, IEEE IRPS, 2006
7. A. Padovani et al., IEEE EDL, 2009