Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1796-1803

  Molas, G ^a   Bocquet, M ^a,b   Vianello, E ^a,d   Perniola, L ^a   Grampeix, H ^a   Colonna, J P ^a   Masarotto, L ^a   Martin, F ^a   Brianceau, P ^a   Gely M ^a   Bongiorno, C ^c   Lombardo, S ^c   Pananakakis, G ^b   Ghibaudo, G ^b   De Salvo, B ^a  

^a CEA LETI   (France)

^b MINATEC   (France)

^c CNR IMM   (Italy)

^d UNIVERSITY OF UDINE   (Italy)

Author keywords

Al2O3; Charge trap memory; Control dielectrics; Flash memories; Hafnium aluminate; HfAlO; HfO2; High k; Interpoly dielectrics; Nitride trap memory; Non volatile memories; Retention; SANOS; Silicon nanocrystals; SONOS

Indexed keywords

AL2O3; CHARGE TRAP MEMORY; CONTROL DIELECTRICS; HAFNIUM ALUMINATE; HFALO; HFO2; HIGH-K; INTERPOLY DIELECTRICS; NITRIDE TRAP MEMORY; NON-VOLATILE MEMORIES; RETENTION; SANOS; SILICON NANOCRYSTALS; SONOS;

ALUMINUM; CHARGE TRAPPING; HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NANOCRYSTALS; NITRIDES; OPTICAL WAVEGUIDES; SILICON COMPOUNDS; SILICON OXIDES;

FLASH MEMORY;

EID: 67349235658     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.083     Document Type: Article

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