Investigation of trapping/detrapping mechanisms in Al2O 3 electron/hole traps and their influence on TANOS memory operations

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Volumn , Issue , 2010, Pages 52-53

  Larcher, Luca ^a   Padovani, Andrea ^a   Marca, Vincenzo Della ^a   Pavan, Paolo ^a   Bertacchini, Alessandro ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; ENERGY LEVEL; KEY MATERIALS; MEMORY OPERATIONS; NON-VOLATILE MEMORIES; PHYSICAL MODEL; QUANTITATIVE INVESTIGATION; TRAPPING LAYERS; TRAPPING/DETRAPPING; TUNNEL DIELECTRICS;

ALUMINUM;

EID: 77957918106     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488951     Document Type: Conference Paper

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