4H-SiC MISFETs with nitrogen-containing insulators

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 10, 2009, Pages 2374-2390

  Noborio, Masato ^a   Suda, Jun ^a   Beljakowa, Svetlana ^b   Krieger, Michael ^b   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; CONDUCTION BAND EDGE; COULOMB SCATTERING; DENSITY OF INTERFACE STATE; ELECTRON TRAPPING; FORMATION PROCESS; GATE INSULATOR; INTERFACE STATE; INTERFACE STATE DENSITY; MIS CAPACITORS; MOSFETS; N-CHANNEL; ORDERS-OF-MAGNITUDE; SCATTERING MECHANISMS; SURFACE LAYERS;

CAPACITANCE; CAPACITORS; ELECTRON MOBILITY; MIS DEVICES; MISFET DEVICES; NITROGEN; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON NITRIDE; SWITCHING CIRCUITS;

MOS CAPACITORS;

EID: 70350037758     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925247     Document Type: Article

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