Effect of the oxidation process on the electrical characteristics of 4H-SIC p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Okamoto, Mitsuo ^a   Tanaka, Mieko ^a   Yatsuo, Tsutomu ^a   Fukuda, Kenji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC PROPERTIES; OXIDATION; SILICON CARBIDE; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CHANNEL MOBILITY; GATE OXIDATION; P-CHANNEL MOSFETS; WET OXIDATION;

MOSFET DEVICES;

EID: 33746265783     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2221400     Document Type: Article

References (11)

1. D. B. Slater, Jr., L. A. Lipkin, G. M. Johnson, A. V. Suborov, and J. W. Palmour, Inst. Phys. Conf. Ser. 142, 805 (1996).
2. Kin Kiong Lee, Takeshi Ohshima, and Hisayoshi Itoh, Mater. Sci. Forum 389-393, 1097 (2002).
3. Man PioLam and Kevin T. Kornegay, IEEE Trans. Electron Devices 46, 546 (1999).
4. J. S. Han, K. Y. Cheong, S. Dimitrijev, M. Laube, and G. Pensl, Mater. Sci. Forum 457-460, 1401 (2004).
5. V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162, 321 (1997).
6. S. Suzuki, W. J. Cho, R. Kosugi, J. Senzaki, S. Harada, and K. Fukuda, Mater. Sci. Forum 353-356, 643 (2001).
7. J. A. Cooper, Jr., Phys. Status Solidi A 162, 305 (1997).
8. A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, M. H. White, and C. D. Brandt, IEEE Electron Device Lett. 18, 586 (1997).
9. S. Sridevan and J. B. Baliga, Mater. Sci. Forum 264-268, 997 (1998).
10. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara, Mater. Sci. Forum 338-342, 1105 (2000).
11. C.-Y. Lu, J. A. Cooper, T. Tsuji, G. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, IEEE Trans. Electron Devices 50, 1582 (2003).