Nitrogen implantation - An alternative technique to reduce traps at SiC/SiO2- interfaces

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 991-994

  Ciobanu, Florin ^a   Frank, Thomas ^a   Pensl, Gerhard ^a   Afanas'ev, Valery ^a   Shamuilia, Sheron ^b   Schöner, Adolf ^c   Kimoto, Tsunenobu ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ACREO AB   (Sweden)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

Interface traps; MOS capacitor; Nitrogen implantation; Oxidation

Indexed keywords

ELECTRON TRAPS; ELECTROOXIDATION; INTERFACES (MATERIALS); MOS CAPACITORS; NITROGEN; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE;

DENSITY OF INTERFACES; INTERFACE TRAPS; NEAR-SURFACE GAUSSIAN NITROGEN; NITROGEN IMPLANTATION;

ION IMPLANTATION;

EID: 36049021535     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.991     Document Type: Conference Paper

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